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> Semiconductor material - silicon
Semiconductor material - silicon
ELECTRICAL RESISTANCE - 3.320 KILOHMS
RESISTANCE TOLERANCE IN PERCENT - -1.000 TO 1.000
POWER DISSIPATION RATING IN WATTS - 0.125 FREE AIR
AMBIENT TEMP IN DEG CELSIUS AT FULL RATED POWER - 125.0
AMBIENT TEMP IN DEG CELSIUS AT ZERO PERCENT RATED POWER - 175.0
TEMP COEFFICIENT OF RESISTANCE IN PPM PER DEG CELSIUS - -100.0 TO 100.0
TEMP RANGE OF TEMP COEFFICIENT IN DEG CELSIUS - -55.0 TO 175.0
INCLOSURE METHOD - ENCAPSULATED
STYLE DESIGNATOR - 14 AXIAL TERMINAL EACH END
BODY DIAMETER - 0.125 INCHES NOMINAL
BODY LENGTH - 0.375 INCHES NOMINAL
MIL-STD-1276 WIRE LEAD TYPE DESIGNATOR - C
RELIABILITY INDICATOR - ESTABLISHED
RELIABILITY FAILURE RATE LEVEL IN PERCENT - 0.001
TERMINAL LENGTH - 1.250 INCHES NOMINAL
TEST DATA DOCUMENT - 81349-MIL-R-55182 SPECIFICATION
SPECIFICATION/STANDARD DATA - 81349-MIL-R-55182/3 GOVERNMENT SPECIFICATION
III UNPACKAGED UNIT WEIGHT - 0.450 GRAMS
(NON-CORE DATA) CUBIC MEASURE - 0.006 CUBIC INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE - MILR55182-3
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE - RNC60K3321FS
