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508 / BU508A sanyo transistor


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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
U.L. RECOGNISED ISOWATT218 PACKAGE
HORIZONTAL DEFLECTION FOR COLOUR TV
The BU508A are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
VCES Collector-Emit ter Voltage (VBE = 0) 1500 V
CEO Collector-Emit ter Voltage (IB = 0) 700 V
EBO Emitter-Base Voltage (IC = 0) 10 V
CM Collector Peak Current (tp < 5 ms) 15 A
tot Total Dissipation at Tc = 25 oC 150 125 50 W
stg Storage Temperature -65 to 175 -65 to 150 -65 to 150 oC
j Max. Operating Junction Temperature 175 150 150 oC



508 / BU508A sanyo transistor